Device modelling of archimedean spiral graphene nanoscroll field-effect-transistor
For the past decades, researchers indicate that persistent scaling of conventional silicon Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) reaching its physical limit at 10nm, resulted in its performance degradation as the search continues for a low-power and high speed, density and relia...
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| 格式: | Thesis |
| 语言: | English |
| 出版: |
2014
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| 主题: | |
| 在线阅读: | http://eprints.utm.my/id/eprint/50698/25/MuhammadAfiqNurudinMFKE2014.pdf |
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