Device modelling of archimedean spiral graphene nanoscroll field-effect-transistor

Device modelling of archimedean spiral graphene nanoscroll field-effect-transistor

For the past decades, researchers indicate that persistent scaling of conventional silicon Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) reaching its physical limit at 10nm, resulted in its performance degradation as the search continues for a low-power and high speed, density and relia...

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書目詳細資料
主要作者:	Hamzah, Muhammad Afiq Nurudin
格式:	Thesis
語言:	English
出版:	2014
主題:	TK Electrical engineering Electronics Nuclear engineering
在線閱讀:	http://eprints.utm.my/id/eprint/50698/25/MuhammadAfiqNurudinMFKE2014.pdf
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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