APA引文

Anthony Hasbi, H. (2005). Structural properties of hydrogenated amorphous silicon (A-SI: H) thin film grown via radio frequency plasma enhanced chemical vapor deposition (RF PECVD).

Chicago Style (17th ed.) Citation

Anthony Hasbi, Hasbullah. Structural Properties of Hydrogenated Amorphous Silicon (A-SI: H) Thin Film Grown via Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD). 2005.

MLA引文

Anthony Hasbi, Hasbullah. Structural Properties of Hydrogenated Amorphous Silicon (A-SI: H) Thin Film Grown via Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD). 2005.

警告：這些引文格式不一定是100％准確.