Anthony Hasbi, H. (2005). Structural properties of hydrogenated amorphous silicon (A-SI: H) thin film grown via radio frequency plasma enhanced chemical vapor deposition (RF PECVD).
Chicago Style (17th ed.) CitationAnthony Hasbi, Hasbullah. Structural Properties of Hydrogenated Amorphous Silicon (A-SI: H) Thin Film Grown via Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD). 2005.
MLA引文Anthony Hasbi, Hasbullah. Structural Properties of Hydrogenated Amorphous Silicon (A-SI: H) Thin Film Grown via Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD). 2005.
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