Structural properties of hydrogenated amorphous silicon (A-SI:H) thin film grown via radio frequency plasma enhanced chemical vapor deposition (RF PECVD)

Structural properties of hydrogenated amorphous silicon (A-SI:H) thin film grown via radio frequency plasma enhanced chemical vapor deposition (RF PECVD)

An investigation of the structural properties of hydrogenated amorphous silicon (a-Si:H) thin films prepared by plasma enhanced chemical vapour deposition of silane (SiH4) was done using a combination of atomic force microscopy (AFM), photoluminescence, infrared and UV spectroscopy. Films were prepa...

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书目详细资料
主要作者:	Anthony Hasbi, Hasbullah
格式:	Thesis
语言:	English
出版:	2005
主题:	QC Physics
在线阅读:	http://eprints.utm.my/id/eprint/5093/1/HasbullahAnthonyHasbiMFS2005.pdf
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