Enhancing SRAM performance of common gate FinFET by using controllable independent double gate

Enhancing SRAM performance of common gate FinFET by using controllable independent double gate

This project is focus on the research and evaluation on the characteristic of independent controllable gate FinFET structure in static random access memory (SRAM) circuitry. BSIM-CMG model for common gate FinFET is chosen in this research. The independent controllable gate FinFET is constructed usin...

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书目详细资料
主要作者:	Chong, Chung Keong
格式:	Thesis
语言:	English
出版:	2015
主题:	TK Electrical engineering Electronics Nuclear engineering
在线阅读:	http://eprints.utm.my/id/eprint/53897/1/ChongChungKeongMFKE2015.pdf
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