Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors

Carbon nanotubes (CNT) and silicon nanowires (Si NW) are nominated as the channel material for the next generation of transistors. Although previous works have shown that both CNT- and Si NW- based Field-Effect-Transistors (FET) are able to deliver better performance than conventional devices, phono...

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Main Author:	Chin, Huei Chaeng
Format:	Thesis
Language:	English
Published:	2015
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/54069/1/ChinHueiChaengMFKE2015.pdf
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spelling	my-utm-ep.540692020-10-15T07:31:16Z Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors 2015-11 Chin, Huei Chaeng TK Electrical engineering. Electronics Nuclear engineering Carbon nanotubes (CNT) and silicon nanowires (Si NW) are nominated as the channel material for the next generation of transistors. Although previous works have shown that both CNT- and Si NW- based Field-Effect-Transistors (FET) are able to deliver better performance than conventional devices, phonon scattering occurs. The goal of this research is to examine the phonon scattering effects on the performance of CNTFET and Si NWFET. The influence of phonon scattering is incorporated into the models by adding the transmission probability into the Landauer-Buttiker ballistic current equation. Results show that the phonon scattering effects have deteriorated the current and become significant with the increase of bias voltages. At ????=0.1??, the current of a CNTFET (Si NWFET) has 0.44% (15.2%) of reduction while at ????=0.8??, the current of a CNTFET (Si NWFET) has degraded by 6.5% (40%). There are two types of phonons, acoustic phonons and optical phonons, with different Mean Free Paths (MFP). The acoustic phonon is the primary cause of current reduction at a low gate bias (????=0.6??), while the optical phonon is dominant in reducing the current at a high gate bias. Besides, transistors with a short channel length operate close to the ballistic region, which is expected, as they approach the phonon MFP. In addition, the potential of CNTFET and Si NWFET to construct as logic gates is confirmed through Voltage Transfer Characteristic (VTC) by showing correct outputs for a given input. Moreover, the accuracy of the simulation results is assessed by comparing them with published models and experimental data, exhibiting good agreement with both. It is revealed that the use of a high-k dielectric and a thinner oxide are able to suppress the Short Channel Effects (SCE). Finally, it is experimentally proven that the device performance is improved by using a local bottom gate structure for CNTFET and a feedback FET for Si NWFET. 2015-11 Thesis http://eprints.utm.my/id/eprint/54069/ http://eprints.utm.my/id/eprint/54069/1/ChinHueiChaengMFKE2015.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:86145 masters Universiti Teknologi Malaysia, Faculty of Electrical Engineering Faculty of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Chin, Huei Chaeng Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors
description	Carbon nanotubes (CNT) and silicon nanowires (Si NW) are nominated as the channel material for the next generation of transistors. Although previous works have shown that both CNT- and Si NW- based Field-Effect-Transistors (FET) are able to deliver better performance than conventional devices, phonon scattering occurs. The goal of this research is to examine the phonon scattering effects on the performance of CNTFET and Si NWFET. The influence of phonon scattering is incorporated into the models by adding the transmission probability into the Landauer-Buttiker ballistic current equation. Results show that the phonon scattering effects have deteriorated the current and become significant with the increase of bias voltages. At ????=0.1??, the current of a CNTFET (Si NWFET) has 0.44% (15.2%) of reduction while at ????=0.8??, the current of a CNTFET (Si NWFET) has degraded by 6.5% (40%). There are two types of phonons, acoustic phonons and optical phonons, with different Mean Free Paths (MFP). The acoustic phonon is the primary cause of current reduction at a low gate bias (????=0.6??), while the optical phonon is dominant in reducing the current at a high gate bias. Besides, transistors with a short channel length operate close to the ballistic region, which is expected, as they approach the phonon MFP. In addition, the potential of CNTFET and Si NWFET to construct as logic gates is confirmed through Voltage Transfer Characteristic (VTC) by showing correct outputs for a given input. Moreover, the accuracy of the simulation results is assessed by comparing them with published models and experimental data, exhibiting good agreement with both. It is revealed that the use of a high-k dielectric and a thinner oxide are able to suppress the Short Channel Effects (SCE). Finally, it is experimentally proven that the device performance is improved by using a local bottom gate structure for CNTFET and a feedback FET for Si NWFET.
format	Thesis
qualification_level	Master's degree
author	Chin, Huei Chaeng
author_facet	Chin, Huei Chaeng
author_sort	Chin, Huei Chaeng
title	Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors
title_short	Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors
title_full	Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors
title_fullStr	Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors
title_full_unstemmed	Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors
title_sort	modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors
granting_institution	Universiti Teknologi Malaysia, Faculty of Electrical Engineering
granting_department	Faculty of Electrical Engineering
publishDate	2015
url	http://eprints.utm.my/id/eprint/54069/1/ChinHueiChaengMFKE2015.pdf
_version_	1747817678199848960

Modeling the effects of phonon scattering in carbon nanotube and silicon nanowire field-effect transistors

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