A complementary metal oxide semiconductor low noise amplifier using integrated active inductor

Low Noise Amplifier (LNA) is a very important component in a receiver system. It provides the smallest noise and high gain to decrease the noise of the subsequent stages and the whole system. As System On Chip (SOC) is very important nowadays, active inductor is an alternative to the designer to hav...

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Main Author:	Khamis @ Roslee, Rafiq Sharman
Format:	Thesis
Language:	English
Published:	2007
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/5978/1/RafiqSharmanKhamisMFKE2007.pdf
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spelling	my-utm-ep.59782018-08-26T04:43:05Z A complementary metal oxide semiconductor low noise amplifier using integrated active inductor 2007-06 Khamis @ Roslee, Rafiq Sharman TK Electrical engineering. Electronics Nuclear engineering Low Noise Amplifier (LNA) is a very important component in a receiver system. It provides the smallest noise and high gain to decrease the noise of the subsequent stages and the whole system. As System On Chip (SOC) is very important nowadays, active inductor is an alternative to the designer to have an integrated design. Furthermore, active inductor can be tuned to obtain the required inductance and Q-factor values. Instead of using passive inductor such as spiral and bonding wire which need bigger die area, active inductor can be employed to save die area but this comes at the cost of higher current consumption and noise. This thesis presents the study of active inductor architecture, how active inductor can combine with LNA and evaluation on LNA performance when active inductor is added. This will help designers to have better understanding on how to use active inductor in their design. This research proposes the Commmon Gate LNA architecture and is designed with 1.2 um CMOS process, operating at 850 MHz. The voltage gain and noise factor obtained are 24.7 dB and 8.26 dB respectively. Two active inductors are used as gain control, input and output matching of LNA. However, the LNA consumes 163.8 mW where 75% percent of power consumption is contributed by active inductor. 2007-06 Thesis http://eprints.utm.my/id/eprint/5978/ http://eprints.utm.my/id/eprint/5978/1/RafiqSharmanKhamisMFKE2007.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:62150 masters Universiti Teknologi Malaysia, Faculty of Electrical Engineering Faculty of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Khamis @ Roslee, Rafiq Sharman A complementary metal oxide semiconductor low noise amplifier using integrated active inductor
description	Low Noise Amplifier (LNA) is a very important component in a receiver system. It provides the smallest noise and high gain to decrease the noise of the subsequent stages and the whole system. As System On Chip (SOC) is very important nowadays, active inductor is an alternative to the designer to have an integrated design. Furthermore, active inductor can be tuned to obtain the required inductance and Q-factor values. Instead of using passive inductor such as spiral and bonding wire which need bigger die area, active inductor can be employed to save die area but this comes at the cost of higher current consumption and noise. This thesis presents the study of active inductor architecture, how active inductor can combine with LNA and evaluation on LNA performance when active inductor is added. This will help designers to have better understanding on how to use active inductor in their design. This research proposes the Commmon Gate LNA architecture and is designed with 1.2 um CMOS process, operating at 850 MHz. The voltage gain and noise factor obtained are 24.7 dB and 8.26 dB respectively. Two active inductors are used as gain control, input and output matching of LNA. However, the LNA consumes 163.8 mW where 75% percent of power consumption is contributed by active inductor.
format	Thesis
qualification_level	Master's degree
author	Khamis @ Roslee, Rafiq Sharman
author_facet	Khamis @ Roslee, Rafiq Sharman
author_sort	Khamis @ Roslee, Rafiq Sharman
title	A complementary metal oxide semiconductor low noise amplifier using integrated active inductor
title_short	A complementary metal oxide semiconductor low noise amplifier using integrated active inductor
title_full	A complementary metal oxide semiconductor low noise amplifier using integrated active inductor
title_fullStr	A complementary metal oxide semiconductor low noise amplifier using integrated active inductor
title_full_unstemmed	A complementary metal oxide semiconductor low noise amplifier using integrated active inductor
title_sort	complementary metal oxide semiconductor low noise amplifier using integrated active inductor
granting_institution	Universiti Teknologi Malaysia, Faculty of Electrical Engineering
granting_department	Faculty of Electrical Engineering
publishDate	2007
url	http://eprints.utm.my/id/eprint/5978/1/RafiqSharmanKhamisMFKE2007.pdf
_version_	1747814619340079104

A complementary metal oxide semiconductor low noise amplifier using integrated active inductor

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