Characterization of planar and vertical n-channel mosfet in nanometer regime

In recent years, there is more and more design on MOSFET that has been developed to fulfill the market need. This project focused on the comparison of planar and vertical n-channel MOS transistor characteristic with effective channel length of 100nm down to 50nm. Planar and vertical n-channel MOS tr...

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Main Author:	Sulaiman, Ima
Format:	Thesis
Language:	English
Published:	2007
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/6389/1/ImaSulaimanMFKE2007.pdf
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id	my-utm-ep.6389
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spelling	my-utm-ep.63892018-10-14T07:19:46Z Characterization of planar and vertical n-channel mosfet in nanometer regime 2007-05 Sulaiman, Ima TK Electrical engineering. Electronics Nuclear engineering In recent years, there is more and more design on MOSFET that has been developed to fulfill the market need. This project focused on the comparison of planar and vertical n-channel MOS transistor characteristic with effective channel length of 100nm down to 50nm. Planar and vertical n-channel MOS transistors with effective channel length ranged from 50nm to 100nm has been developed. Simulation of the device design is done by using Silvaco-DevEdit. Short channel effect (SCE) is investigated through out the device simulation. SCEs affect on device and circuit performance in off-state leakage current and VT roll-off. At the device simulation process, using Silvaco Atlas, the electrical parameter is extracted to investigate the device characteristic. Several design analysis are performed to investigate the effectiveness and robustness of the method in order to prevent the varying threshold voltage or short channel effect of a MOSFET device. A single channel vertical NMOS shows better VT roll-off and better subthreshold swing at ~85mV/decade. On the other hand, planar NMOS has lower threshold voltage value which is suitable for low voltage devices. With these advantages from each NMOS analysis, one can decide which device to use to achieve required specification for specific usage in future. 2007-05 Thesis http://eprints.utm.my/id/eprint/6389/ http://eprints.utm.my/id/eprint/6389/1/ImaSulaimanMFKE2007.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:62301 masters Universiti Teknologi Malaysia, Faculty of Electrical Engineering Faculty of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Sulaiman, Ima Characterization of planar and vertical n-channel mosfet in nanometer regime
description	In recent years, there is more and more design on MOSFET that has been developed to fulfill the market need. This project focused on the comparison of planar and vertical n-channel MOS transistor characteristic with effective channel length of 100nm down to 50nm. Planar and vertical n-channel MOS transistors with effective channel length ranged from 50nm to 100nm has been developed. Simulation of the device design is done by using Silvaco-DevEdit. Short channel effect (SCE) is investigated through out the device simulation. SCEs affect on device and circuit performance in off-state leakage current and VT roll-off. At the device simulation process, using Silvaco Atlas, the electrical parameter is extracted to investigate the device characteristic. Several design analysis are performed to investigate the effectiveness and robustness of the method in order to prevent the varying threshold voltage or short channel effect of a MOSFET device. A single channel vertical NMOS shows better VT roll-off and better subthreshold swing at ~85mV/decade. On the other hand, planar NMOS has lower threshold voltage value which is suitable for low voltage devices. With these advantages from each NMOS analysis, one can decide which device to use to achieve required specification for specific usage in future.
format	Thesis
qualification_level	Master's degree
author	Sulaiman, Ima
author_facet	Sulaiman, Ima
author_sort	Sulaiman, Ima
title	Characterization of planar and vertical n-channel mosfet in nanometer regime
title_short	Characterization of planar and vertical n-channel mosfet in nanometer regime
title_full	Characterization of planar and vertical n-channel mosfet in nanometer regime
title_fullStr	Characterization of planar and vertical n-channel mosfet in nanometer regime
title_full_unstemmed	Characterization of planar and vertical n-channel mosfet in nanometer regime
title_sort	characterization of planar and vertical n-channel mosfet in nanometer regime
granting_institution	Universiti Teknologi Malaysia, Faculty of Electrical Engineering
granting_department	Faculty of Electrical Engineering
publishDate	2007
url	http://eprints.utm.my/id/eprint/6389/1/ImaSulaimanMFKE2007.pdf
_version_	1747814648137121792

Characterization of planar and vertical n-channel mosfet in nanometer regime

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