Modeling and simulation of strained graprene nanoribbon field effect transistor

Stretching technique used in material fundamental is not a new technology. It has been adopted in silicon industry to overcome the limitations arisen by scaling down the size of the conventional metal oxide semiconductor Field Effect Transistor (FET). This technique is known as strain technology. As...

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Main Author:	Cre Rosid, Nurul Aida Izuani
Format:	Thesis
Language:	English
Published:	2016
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/77839/1/NurulAidaIzuaniMFKE2016.pdf
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spelling	my-utm-ep.778392018-07-04T11:46:10Z Modeling and simulation of strained graprene nanoribbon field effect transistor 2016-01 Cre Rosid, Nurul Aida Izuani TK Electrical engineering. Electronics Nuclear engineering Stretching technique used in material fundamental is not a new technology. It has been adopted in silicon industry to overcome the limitations arisen by scaling down the size of the conventional metal oxide semiconductor Field Effect Transistor (FET). This technique is known as strain technology. As the semiconductor industry grows in their maturity, the replacement of strained silicon with another material offering a higher potential quasi-ballistic-carrier velocity and higher mobility is importance. Recent enlisted superior material is quasi-one dimensional Graphene NanoRibbons (GNR). GNR is the most promising material for future nanoelectronic that inherited most properties from graphene and Carbon NanoTube (CNT) itself. To characterize the effect made by strain technology in silicon, an analytical model of strained GNRFET is presented in this work to analyse the suitability of this material for future FET. This works presents a simple model of current-voltage characteristic in the function of strain for different widths. By using a tight-binding approximation and analytical solution, the strained GNR bandstructure, density of states and carrier statistic are presented. Further observation on their carrier transport and their current-voltage characteristic is also investigated and presented in this research. It is found in this research that strain gives significant effect according to different width groups. It is successful in tailoring the energy gap and linearly changing the carrier statistic and carrier transport. In terms of physical and electrical performance, strained 3m+1 GNR is found to be a good material for future FET with enhanced mobility due to the energy gap alteration by strain. Strained GNRFET also was found to be 55mV/dec in subthreshold slope, which is smaller than normal GNRFET, which means the transistor has faster switching. Besides, the currentvoltage characteristic is reported to have delayed saturation region compared to published model due to the different in quantum effect consideration. 2016-01 Thesis http://eprints.utm.my/id/eprint/77839/ http://eprints.utm.my/id/eprint/77839/1/NurulAidaIzuaniMFKE2016.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:94144 masters Universiti Teknologi Malaysia, Faculty of Electrical Engineering Faculty of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Cre Rosid, Nurul Aida Izuani Modeling and simulation of strained graprene nanoribbon field effect transistor
description	Stretching technique used in material fundamental is not a new technology. It has been adopted in silicon industry to overcome the limitations arisen by scaling down the size of the conventional metal oxide semiconductor Field Effect Transistor (FET). This technique is known as strain technology. As the semiconductor industry grows in their maturity, the replacement of strained silicon with another material offering a higher potential quasi-ballistic-carrier velocity and higher mobility is importance. Recent enlisted superior material is quasi-one dimensional Graphene NanoRibbons (GNR). GNR is the most promising material for future nanoelectronic that inherited most properties from graphene and Carbon NanoTube (CNT) itself. To characterize the effect made by strain technology in silicon, an analytical model of strained GNRFET is presented in this work to analyse the suitability of this material for future FET. This works presents a simple model of current-voltage characteristic in the function of strain for different widths. By using a tight-binding approximation and analytical solution, the strained GNR bandstructure, density of states and carrier statistic are presented. Further observation on their carrier transport and their current-voltage characteristic is also investigated and presented in this research. It is found in this research that strain gives significant effect according to different width groups. It is successful in tailoring the energy gap and linearly changing the carrier statistic and carrier transport. In terms of physical and electrical performance, strained 3m+1 GNR is found to be a good material for future FET with enhanced mobility due to the energy gap alteration by strain. Strained GNRFET also was found to be 55mV/dec in subthreshold slope, which is smaller than normal GNRFET, which means the transistor has faster switching. Besides, the currentvoltage characteristic is reported to have delayed saturation region compared to published model due to the different in quantum effect consideration.
format	Thesis
qualification_level	Master's degree
author	Cre Rosid, Nurul Aida Izuani
author_facet	Cre Rosid, Nurul Aida Izuani
author_sort	Cre Rosid, Nurul Aida Izuani
title	Modeling and simulation of strained graprene nanoribbon field effect transistor
title_short	Modeling and simulation of strained graprene nanoribbon field effect transistor
title_full	Modeling and simulation of strained graprene nanoribbon field effect transistor
title_fullStr	Modeling and simulation of strained graprene nanoribbon field effect transistor
title_full_unstemmed	Modeling and simulation of strained graprene nanoribbon field effect transistor
title_sort	modeling and simulation of strained graprene nanoribbon field effect transistor
granting_institution	Universiti Teknologi Malaysia, Faculty of Electrical Engineering
granting_department	Faculty of Electrical Engineering
publishDate	2016
url	http://eprints.utm.my/id/eprint/77839/1/NurulAidaIzuaniMFKE2016.pdf
_version_	1747817843653607424

Modeling and simulation of strained graprene nanoribbon field effect transistor

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