A simulation study of photoluminescence silicon nanowires

The need for the integration of silicon (Si) nanostructures (NS) in optical devices has led to the search for silicon based materials and structures that emit lights with high quantum efficiency. Since after the observation of room temperature visible photoluminescence (PL) from silicon nanostructur...

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Main Author:	Isiyaku, Aliyu Kabiru
Format:	Thesis
Language:	English
Published:	2014
Subjects:	QC Physics
Online Access:	http://eprints.utm.my/id/eprint/78693/1/AliyuKabiruIsiyakuMFS2014.pdf
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spelling	my-utm-ep.786932018-08-29T07:56:59Z A simulation study of photoluminescence silicon nanowires 2014-12 Isiyaku, Aliyu Kabiru QC Physics The need for the integration of silicon (Si) nanostructures (NS) in optical devices has led to the search for silicon based materials and structures that emit lights with high quantum efficiency. Since after the observation of room temperature visible photoluminescence (PL) from silicon nanostructures (Quantum dot or wire) and the feasibility of turning the optical response of Si NS by modifying their size, many experimental and theoretical works have been done to explain the origin of the visible photoluminescence mechanism. However, the mechanism of visible luminescence remains unclear despite the efforts. Lately, Si nanostructure with hydrogen and oxygen passivated surface become attractive due to enhanced light emission. the purpose of this research is to develop a hybrid model of quantum confinement effect (QCE), surface state effects (SSE) and exciton energy state (EES) to study PL spectra of Si nanowire using data obtained from experimental and simulation (pseudo-potential approximation and tight binding method) findings. A simple, linear simulation method (matlab codes) is used to examine the optical responses of Si NWs with diameter between 1.5 and 5.8nm. An integrated photoluminescence intensity model is adopted to generate PL spectra. The results of this work indicate that both QCE and surface passivation together with exciton effects determine the optoelectronic properties of Si NWs. We demonstrate that by controlling a set of parameters extracted by fitting the model with experiment and simulation, it is possible to interpret the PL spectral features. The band gap is found to decrease with the increase of NWs diameter and increases more with decreasing oxygenated surface than hydrogenated surface. The finding results are compared with other model calculations and experimental works. The admirable features of the results suggest that the present model is significant for understanding the mechanism of visible PL from Si NWs. The model can be extended for other nanostructures of different shapes and size. 2014-12 Thesis http://eprints.utm.my/id/eprint/78693/ http://eprints.utm.my/id/eprint/78693/1/AliyuKabiruIsiyakuMFS2014.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:105914 masters Universiti Teknologi Malaysia, Faculty of Science Faculty of Science
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	QC Physics
spellingShingle	QC Physics Isiyaku, Aliyu Kabiru A simulation study of photoluminescence silicon nanowires
description	The need for the integration of silicon (Si) nanostructures (NS) in optical devices has led to the search for silicon based materials and structures that emit lights with high quantum efficiency. Since after the observation of room temperature visible photoluminescence (PL) from silicon nanostructures (Quantum dot or wire) and the feasibility of turning the optical response of Si NS by modifying their size, many experimental and theoretical works have been done to explain the origin of the visible photoluminescence mechanism. However, the mechanism of visible luminescence remains unclear despite the efforts. Lately, Si nanostructure with hydrogen and oxygen passivated surface become attractive due to enhanced light emission. the purpose of this research is to develop a hybrid model of quantum confinement effect (QCE), surface state effects (SSE) and exciton energy state (EES) to study PL spectra of Si nanowire using data obtained from experimental and simulation (pseudo-potential approximation and tight binding method) findings. A simple, linear simulation method (matlab codes) is used to examine the optical responses of Si NWs with diameter between 1.5 and 5.8nm. An integrated photoluminescence intensity model is adopted to generate PL spectra. The results of this work indicate that both QCE and surface passivation together with exciton effects determine the optoelectronic properties of Si NWs. We demonstrate that by controlling a set of parameters extracted by fitting the model with experiment and simulation, it is possible to interpret the PL spectral features. The band gap is found to decrease with the increase of NWs diameter and increases more with decreasing oxygenated surface than hydrogenated surface. The finding results are compared with other model calculations and experimental works. The admirable features of the results suggest that the present model is significant for understanding the mechanism of visible PL from Si NWs. The model can be extended for other nanostructures of different shapes and size.
format	Thesis
qualification_level	Master's degree
author	Isiyaku, Aliyu Kabiru
author_facet	Isiyaku, Aliyu Kabiru
author_sort	Isiyaku, Aliyu Kabiru
title	A simulation study of photoluminescence silicon nanowires
title_short	A simulation study of photoluminescence silicon nanowires
title_full	A simulation study of photoluminescence silicon nanowires
title_fullStr	A simulation study of photoluminescence silicon nanowires
title_full_unstemmed	A simulation study of photoluminescence silicon nanowires
title_sort	simulation study of photoluminescence silicon nanowires
granting_institution	Universiti Teknologi Malaysia, Faculty of Science
granting_department	Faculty of Science
publishDate	2014
url	http://eprints.utm.my/id/eprint/78693/1/AliyuKabiruIsiyakuMFS2014.pdf
_version_	1747818048188841984

A simulation study of photoluminescence silicon nanowires

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