Development of very high frequency plasma enhanced chemical vapour deposition for nanostructure silicon carbide thin film deposition
Silicon carbide (SiC) is a semiconductor material which has received a great deal of attention due to its outstanding mechanical properties, chemical inertness, thermal stability, superior oxidation resistance, high hardness, wide band gap and relatively low weight for applications in high frequency...
Saved in:
主要作者: | Omar, Muhammad Firdaus |
---|---|
格式: | Thesis |
语言: | English |
出版: |
2016
|
主题: | |
在线阅读: | http://eprints.utm.my/id/eprint/78785/1/MuhammadFirdausOmarPFS2016.pdf |
标签: |
添加标签
没有标签, 成为第一个标记此记录!
|
相似书籍
-
Structural and optical properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition
由: Jusoh, Haezah Munyati
出版: (2020) -
Comparison of the structural properties of silicon carbide using very high frequency plasma enhanced chemical vapour deposition with magnetron sputtering techniques
由: Azali, Muhamad Muizzudin
出版: (2022) -
Hot-wire plasma enhanced chemical vapour deposition system for preparation of silicon carbide thin films /
由: Aniszawati Azis
出版: (2012) -
The morphology and structural properties of silicon carbide quantum dots grown by very high frequency plasma enhanced chemical vapour deposition
由: Abd. Karim, Nur Farah Nadia
出版: (2019) -
Phase change analysis of crystalline silicon thin film grown by very high frequency - plasma enhanced chemical vapour deposition and radio frequency - magnetron sputtering
由: Rosman, Nor Hariz Kadir
出版: (2020)