Development of very high frequency plasma enhanced chemical vapour deposition for nanostructure silicon carbide thin film deposition
Silicon carbide (SiC) is a semiconductor material which has received a great deal of attention due to its outstanding mechanical properties, chemical inertness, thermal stability, superior oxidation resistance, high hardness, wide band gap and relatively low weight for applications in high frequency...
محفوظ في:
المؤلف الرئيسي: | Omar, Muhammad Firdaus |
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التنسيق: | أطروحة |
اللغة: | English |
منشور في: |
2016
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الموضوعات: | |
الوصول للمادة أونلاين: | http://eprints.utm.my/id/eprint/78785/1/MuhammadFirdausOmarPFS2016.pdf |
الوسوم: |
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مواد مشابهة
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