Optimization of n-channel silicon nanowire field effect transistor using Taguchi method

In the last few decades, the performance of electronics devices, especially the transistors have made tremendous progress thanks to the novel metal-oxidesemiconductor field-effect-transistor (MOSFET) devices structure like Silicon Nanowire FET (SNWFET). As the device is scaled down into nanometer re...

Full description

Saved in:
Bibliographic Details
Main Author: Wahab, Nurul Eryana
Format: Thesis
Language:English
Published: 2018
Subjects:
Online Access:http://eprints.utm.my/id/eprint/78957/1/NurulEryanaWahabMFKE2018.pdf
Tags: Add Tag
No Tags, Be the first to tag this record!