Synthesize of aluminum zinc oxide nanowires for dye sensitized solar cell application

Zinc oxide nanowires (ZnO NWs) have evoked extensive attention in recent years because of their potential technological applications. Aluminum (Al-ZnO) doped ZnO NWs have been deposited onto indium tin oxide (ITO) glass substrate, by using sol-gel spin coating and hydrothermal methods. Al-ZnO NWs wi...

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Main Author:	Noorikalkenari, Hassan
Format:	Thesis
Language:	English
Published:	2017
Subjects:	QC Physics
Online Access:	http://eprints.utm.my/id/eprint/79313/1/HassanNoorikalkenariPFS2017.pdf
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spelling	my-utm-ep.793132018-10-14T08:42:15Z Synthesize of aluminum zinc oxide nanowires for dye sensitized solar cell application 2017 Noorikalkenari, Hassan QC Physics Zinc oxide nanowires (ZnO NWs) have evoked extensive attention in recent years because of their potential technological applications. Aluminum (Al-ZnO) doped ZnO NWs have been deposited onto indium tin oxide (ITO) glass substrate, by using sol-gel spin coating and hydrothermal methods. Al-ZnO NWs with the percentage of Al content up to 6% were annealed at 450–600 °C. The structural, electrical and optical properties of the samples were characterized with X-ray diffraction (XRD), Energy-dispersive X-ray (EDX) spectroscope, Field-emission scanning electron microscope (FE-SEM), atomic force microscope (AFM), and UV-Visible spectrophotometer and photoluminescence (PL) spectrometer. Meanwhile, the Al-ZnO NWs conductivity level was determined by Van der Pauw method. XRD analysis confirmed a single phase spinel structure with the crystallite size between 20-50 nm calculated using the Scherrer’s formula. The highest main diffraction peak corresponding to the (002) orientation was due to the dominant phase of Al-ZnO at annealing temperature of 550 °C. The FE-SEM and AFM micrographs displayed the formation of well-defined and homogenous crystallite grains. The biggest grain size of 37 nm was observed for Al-ZnO NWs prepared with 6% Al concentration and annealed at 550 °C. The samples showed a high transmittance of more than 85% in the visible region, with energy band gap in the range of 3.25 to 3.35 eV. In addition, the electrical measurement result of the Al-ZnO NWs showed the lowest conductivity value of 2.49×10-4 S/cm with the activation energy Ea = 27 meV. A dye sensitized solar sell (DSSC) with this design showed a high short-circuit current density of 3.94 mA/cm2 and open circuit voltage of 0.48 V. A DSSC with efficiency of 0.72% was achieved using this photo-anode. 2017 Thesis http://eprints.utm.my/id/eprint/79313/ http://eprints.utm.my/id/eprint/79313/1/HassanNoorikalkenariPFS2017.pdf application/pdf en public phd doctoral Universiti Teknologi Malaysia, Faculty of Science Faculty of Science
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	QC Physics
spellingShingle	QC Physics Noorikalkenari, Hassan Synthesize of aluminum zinc oxide nanowires for dye sensitized solar cell application
description	Zinc oxide nanowires (ZnO NWs) have evoked extensive attention in recent years because of their potential technological applications. Aluminum (Al-ZnO) doped ZnO NWs have been deposited onto indium tin oxide (ITO) glass substrate, by using sol-gel spin coating and hydrothermal methods. Al-ZnO NWs with the percentage of Al content up to 6% were annealed at 450–600 °C. The structural, electrical and optical properties of the samples were characterized with X-ray diffraction (XRD), Energy-dispersive X-ray (EDX) spectroscope, Field-emission scanning electron microscope (FE-SEM), atomic force microscope (AFM), and UV-Visible spectrophotometer and photoluminescence (PL) spectrometer. Meanwhile, the Al-ZnO NWs conductivity level was determined by Van der Pauw method. XRD analysis confirmed a single phase spinel structure with the crystallite size between 20-50 nm calculated using the Scherrer’s formula. The highest main diffraction peak corresponding to the (002) orientation was due to the dominant phase of Al-ZnO at annealing temperature of 550 °C. The FE-SEM and AFM micrographs displayed the formation of well-defined and homogenous crystallite grains. The biggest grain size of 37 nm was observed for Al-ZnO NWs prepared with 6% Al concentration and annealed at 550 °C. The samples showed a high transmittance of more than 85% in the visible region, with energy band gap in the range of 3.25 to 3.35 eV. In addition, the electrical measurement result of the Al-ZnO NWs showed the lowest conductivity value of 2.49×10-4 S/cm with the activation energy Ea = 27 meV. A dye sensitized solar sell (DSSC) with this design showed a high short-circuit current density of 3.94 mA/cm2 and open circuit voltage of 0.48 V. A DSSC with efficiency of 0.72% was achieved using this photo-anode.
format	Thesis
qualification_name	Doctor of Philosophy (PhD.)
qualification_level	Doctorate
author	Noorikalkenari, Hassan
author_facet	Noorikalkenari, Hassan
author_sort	Noorikalkenari, Hassan
title	Synthesize of aluminum zinc oxide nanowires for dye sensitized solar cell application
title_short	Synthesize of aluminum zinc oxide nanowires for dye sensitized solar cell application
title_full	Synthesize of aluminum zinc oxide nanowires for dye sensitized solar cell application
title_fullStr	Synthesize of aluminum zinc oxide nanowires for dye sensitized solar cell application
title_full_unstemmed	Synthesize of aluminum zinc oxide nanowires for dye sensitized solar cell application
title_sort	synthesize of aluminum zinc oxide nanowires for dye sensitized solar cell application
granting_institution	Universiti Teknologi Malaysia, Faculty of Science
granting_department	Faculty of Science
publishDate	2017
url	http://eprints.utm.my/id/eprint/79313/1/HassanNoorikalkenariPFS2017.pdf
_version_	1747818197965340672

Synthesize of aluminum zinc oxide nanowires for dye sensitized solar cell application

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