Morphologies, optical and electrical characterization of aluminum tin sulfide thin film.

Tin (??) sulfide (SnS) has caught many researcher’s attentions as alternative material for solar cell absorber layer due to its abundance in nature, high absorption coefficient (a >104 cm-1) and ideal energy bandgap (in the range of 1.3 – 1.5 eV) that make SnS a suitable candidate for solar cell...

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Main Author:	Hashim, Muhamad Faiz
Format:	Thesis
Language:	English
Published:	2017
Subjects:	QC Physics
Online Access:	http://eprints.utm.my/id/eprint/81577/1/MuhamadFaizHashimMFS2017.pdf
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spelling	my-utm-ep.815772019-09-10T01:41:10Z Morphologies, optical and electrical characterization of aluminum tin sulfide thin film. 2017 Hashim, Muhamad Faiz QC Physics Tin (??) sulfide (SnS) has caught many researcher’s attentions as alternative material for solar cell absorber layer due to its abundance in nature, high absorption coefficient (a >104 cm-1) and ideal energy bandgap (in the range of 1.3 – 1.5 eV) that make SnS a suitable candidate for solar cell absorber layer. Aluminum doped SnS (Al:SnS) thin films were deposited onto glass substrates using thermal evaporator machine and annealed at 200oC for 2 hours under vacuum environment. The effects of doping at different weight percentages and annealing processes were investigated thoroughly using X-Ray diffraction (XRD) unit, scanning electron microscope (SEM), atomic force microscope (AFM) and ultra-violet visible (UV-Vis) spectrophotometer. From the XRD pattern, it was confirmed that Al:SnS thin films were successfully deposited using thermal evaporation technique. All the thin film samples were polycrystalline SnS oriented along the (111) direction with orthorhombic structure. XRD results also showed that doping and annealing processes increased the crystallite size of the thin film samples. Based on the SEM and AFM data, uniform thin film surfaces were obtained from samples that underwent the annealing process. UV-Vis spectral analysis indicated that the energy bandgaps for all samples were in the range of 1.32 to 1.49 eV, which were suitable for solar cell applications. From the four point probe measurement, it was found that SnS samples with lower resistivity were achieved when the samples were doped with aluminum. As conclusion, doping percentage and annealing process play vital role in producing high quality and suitable Al:SnS thin films for solar cell absorber layer. 2017 Thesis http://eprints.utm.my/id/eprint/81577/ http://eprints.utm.my/id/eprint/81577/1/MuhamadFaizHashimMFS2017.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:124935 masters Universiti Teknologi Malaysia Physics
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	QC Physics
spellingShingle	QC Physics Hashim, Muhamad Faiz Morphologies, optical and electrical characterization of aluminum tin sulfide thin film.
description	Tin (??) sulfide (SnS) has caught many researcher’s attentions as alternative material for solar cell absorber layer due to its abundance in nature, high absorption coefficient (a >104 cm-1) and ideal energy bandgap (in the range of 1.3 – 1.5 eV) that make SnS a suitable candidate for solar cell absorber layer. Aluminum doped SnS (Al:SnS) thin films were deposited onto glass substrates using thermal evaporator machine and annealed at 200oC for 2 hours under vacuum environment. The effects of doping at different weight percentages and annealing processes were investigated thoroughly using X-Ray diffraction (XRD) unit, scanning electron microscope (SEM), atomic force microscope (AFM) and ultra-violet visible (UV-Vis) spectrophotometer. From the XRD pattern, it was confirmed that Al:SnS thin films were successfully deposited using thermal evaporation technique. All the thin film samples were polycrystalline SnS oriented along the (111) direction with orthorhombic structure. XRD results also showed that doping and annealing processes increased the crystallite size of the thin film samples. Based on the SEM and AFM data, uniform thin film surfaces were obtained from samples that underwent the annealing process. UV-Vis spectral analysis indicated that the energy bandgaps for all samples were in the range of 1.32 to 1.49 eV, which were suitable for solar cell applications. From the four point probe measurement, it was found that SnS samples with lower resistivity were achieved when the samples were doped with aluminum. As conclusion, doping percentage and annealing process play vital role in producing high quality and suitable Al:SnS thin films for solar cell absorber layer.
format	Thesis
qualification_level	Master's degree
author	Hashim, Muhamad Faiz
author_facet	Hashim, Muhamad Faiz
author_sort	Hashim, Muhamad Faiz
title	Morphologies, optical and electrical characterization of aluminum tin sulfide thin film.
title_short	Morphologies, optical and electrical characterization of aluminum tin sulfide thin film.
title_full	Morphologies, optical and electrical characterization of aluminum tin sulfide thin film.
title_fullStr	Morphologies, optical and electrical characterization of aluminum tin sulfide thin film.
title_full_unstemmed	Morphologies, optical and electrical characterization of aluminum tin sulfide thin film.
title_sort	morphologies, optical and electrical characterization of aluminum tin sulfide thin film.
granting_institution	Universiti Teknologi Malaysia
granting_department	Physics
publishDate	2017
url	http://eprints.utm.my/id/eprint/81577/1/MuhamadFaizHashimMFS2017.pdf
_version_	1747818362481672192

Morphologies, optical and electrical characterization of aluminum tin sulfide thin film.

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