Design of dual-band matching network for highly efficient power amplifier

In the last decades wireless communications has been growing tremendously and given that the trend will most likely continue at a cumulative pace it is imperative that in the future, the transceivers designed need to operate at a near ideal energy efficiency on new frequency bands demanded by the 5G...

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Main Author:	Kirish, Boodhoo
Format:	Thesis
Language:	English
Published:	2019
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/85782/1/BoodhooKirishMSKE2019.pdf
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spelling	my-utm-ep.857822020-07-30T07:34:16Z Design of dual-band matching network for highly efficient power amplifier 2019 Kirish, Boodhoo TK Electrical engineering. Electronics Nuclear engineering In the last decades wireless communications has been growing tremendously and given that the trend will most likely continue at a cumulative pace it is imperative that in the future, the transceivers designed need to operate at a near ideal energy efficiency on new frequency bands demanded by the 5G standard. Since transmitters are the corner stone of any wireless communication systems and that power amplifier (PA) is a high power consuming device within it. It is evident that the design of a highly efficient PA might tackle the significant portion of power loss within RF and microwave systems. The design of PA proposed in this work is aimed at dual band frequencies based on the LTE standards of LTE 42 and LTE 43 having range of 3.4 GHz to 3.6 GHz and 3.6 GHz to 3.8 GHz respectively. The design of a PA begins at characterizing the transistor employed then followed by conjugate matching of the input aimed at the gate. In the design for a highly efficient power amplifier, the design of the OMN plays a pivotal role. This is usually achieved by employing load pull techniques aimed at the drain to find the optimum impedance requirement at desired frequency. Then by employing band-pass filters aimed only to allow the two LTE bands to pass through will cause all the other harmonic frequencies suppression. Having an ideal efficiency of 100% and their simplistic design over other PA classes makes the Class E amplifier a viable choice. Although theoretically Class E amplifier have an ideal efficiency, we expect by achieving 60% to 80% efficiency will be an acceptable target since in practice the efficiency largely depends on the type of transistor being implemented in the PA system. 2019 Thesis http://eprints.utm.my/id/eprint/85782/ http://eprints.utm.my/id/eprint/85782/1/BoodhooKirishMSKE2019.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:132628 masters Universiti Teknologi Malaysia, Faculty of Engineering - School of Electrical Engineering Faculty of Engineering - School of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Kirish, Boodhoo Design of dual-band matching network for highly efficient power amplifier
description	In the last decades wireless communications has been growing tremendously and given that the trend will most likely continue at a cumulative pace it is imperative that in the future, the transceivers designed need to operate at a near ideal energy efficiency on new frequency bands demanded by the 5G standard. Since transmitters are the corner stone of any wireless communication systems and that power amplifier (PA) is a high power consuming device within it. It is evident that the design of a highly efficient PA might tackle the significant portion of power loss within RF and microwave systems. The design of PA proposed in this work is aimed at dual band frequencies based on the LTE standards of LTE 42 and LTE 43 having range of 3.4 GHz to 3.6 GHz and 3.6 GHz to 3.8 GHz respectively. The design of a PA begins at characterizing the transistor employed then followed by conjugate matching of the input aimed at the gate. In the design for a highly efficient power amplifier, the design of the OMN plays a pivotal role. This is usually achieved by employing load pull techniques aimed at the drain to find the optimum impedance requirement at desired frequency. Then by employing band-pass filters aimed only to allow the two LTE bands to pass through will cause all the other harmonic frequencies suppression. Having an ideal efficiency of 100% and their simplistic design over other PA classes makes the Class E amplifier a viable choice. Although theoretically Class E amplifier have an ideal efficiency, we expect by achieving 60% to 80% efficiency will be an acceptable target since in practice the efficiency largely depends on the type of transistor being implemented in the PA system.
format	Thesis
qualification_level	Master's degree
author	Kirish, Boodhoo
author_facet	Kirish, Boodhoo
author_sort	Kirish, Boodhoo
title	Design of dual-band matching network for highly efficient power amplifier
title_short	Design of dual-band matching network for highly efficient power amplifier
title_full	Design of dual-band matching network for highly efficient power amplifier
title_fullStr	Design of dual-band matching network for highly efficient power amplifier
title_full_unstemmed	Design of dual-band matching network for highly efficient power amplifier
title_sort	design of dual-band matching network for highly efficient power amplifier
granting_institution	Universiti Teknologi Malaysia, Faculty of Engineering - School of Electrical Engineering
granting_department	Faculty of Engineering - School of Electrical Engineering
publishDate	2019
url	http://eprints.utm.my/id/eprint/85782/1/BoodhooKirishMSKE2019.pdf
_version_	1747818454730145792

Design of dual-band matching network for highly efficient power amplifier

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