Characterizations of gallium arsenide nanowires grown by buffer layer assisted magnetron sputtering technique

Semiconductor nanowires (NWs) are among the most extensively studied nanostructure for their potential applications in nanoscale devices. Gallium arsenide (GaAs) NWs is a high-performance material with direct bandgap and high electron mobility. Despite the great potential for future nanotechnology,...

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Main Author:	Mohamad Nasir, Nor Fadilah
Format:	Thesis
Language:	English
Published:	2018
Subjects:	QC Physics
Online Access:	http://eprints.utm.my/id/eprint/86159/1/NorFadilahMohamadMFS2018.pdf
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spelling	my-utm-ep.861592020-08-30T09:04:55Z Characterizations of gallium arsenide nanowires grown by buffer layer assisted magnetron sputtering technique 2018 Mohamad Nasir, Nor Fadilah QC Physics Semiconductor nanowires (NWs) are among the most extensively studied nanostructure for their potential applications in nanoscale devices. Gallium arsenide (GaAs) NWs is a high-performance material with direct bandgap and high electron mobility. Despite the great potential for future nanotechnology, its widespread use when integrated with silicon (Si) has been limited by lattice mismatch, difference in thermal expansion coefficient, antiphase boundaries, relatively high production cost and inadequate ecological safety. Here, the results of growing GaAs NWs onto Si substrate via radio frequency (RF) magnetron sputtering by using a simple single buffer layer are reported. This research presents the integration of GaAs NWs on Si with various thickness of sputtered GaAs buffer layer ranging from 10 nm to 110 nm using aurum (Au) nanoparticles as a seeding catalyst via vapour-liquid-solid mechanism. The desired morphology and uniform thickness of GaAs buffer layer with Au nanoparticles were annealed at Au-GaAs eutectic temperature in order to form an eutectic liquid alloy, followed by growth process between 570 ?C and 690 ?C growth temperature. The structural and optical properties of GaAs NWs were characterized using field emission scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy as well as photoluminescence, X-ray diffraction and ultraviolet-visible spectrophotometers. The results have shown that the sufficient thickness of buffer layer of about 19.48 nm, optimized annealing temperature at 630 ᵒC and a suitable growth temperature at 630 ᵒC play important roles in producing high quality buffer layer which then lead to growth of GaAs NWs. 2018 Thesis http://eprints.utm.my/id/eprint/86159/ http://eprints.utm.my/id/eprint/86159/1/NorFadilahMohamadMFS2018.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:132681 masters Universiti Teknologi Malaysia, Faculty of Science Faculty of Science
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	QC Physics
spellingShingle	QC Physics Mohamad Nasir, Nor Fadilah Characterizations of gallium arsenide nanowires grown by buffer layer assisted magnetron sputtering technique
description	Semiconductor nanowires (NWs) are among the most extensively studied nanostructure for their potential applications in nanoscale devices. Gallium arsenide (GaAs) NWs is a high-performance material with direct bandgap and high electron mobility. Despite the great potential for future nanotechnology, its widespread use when integrated with silicon (Si) has been limited by lattice mismatch, difference in thermal expansion coefficient, antiphase boundaries, relatively high production cost and inadequate ecological safety. Here, the results of growing GaAs NWs onto Si substrate via radio frequency (RF) magnetron sputtering by using a simple single buffer layer are reported. This research presents the integration of GaAs NWs on Si with various thickness of sputtered GaAs buffer layer ranging from 10 nm to 110 nm using aurum (Au) nanoparticles as a seeding catalyst via vapour-liquid-solid mechanism. The desired morphology and uniform thickness of GaAs buffer layer with Au nanoparticles were annealed at Au-GaAs eutectic temperature in order to form an eutectic liquid alloy, followed by growth process between 570 ?C and 690 ?C growth temperature. The structural and optical properties of GaAs NWs were characterized using field emission scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy as well as photoluminescence, X-ray diffraction and ultraviolet-visible spectrophotometers. The results have shown that the sufficient thickness of buffer layer of about 19.48 nm, optimized annealing temperature at 630 ᵒC and a suitable growth temperature at 630 ᵒC play important roles in producing high quality buffer layer which then lead to growth of GaAs NWs.
format	Thesis
qualification_level	Master's degree
author	Mohamad Nasir, Nor Fadilah
author_facet	Mohamad Nasir, Nor Fadilah
author_sort	Mohamad Nasir, Nor Fadilah
title	Characterizations of gallium arsenide nanowires grown by buffer layer assisted magnetron sputtering technique
title_short	Characterizations of gallium arsenide nanowires grown by buffer layer assisted magnetron sputtering technique
title_full	Characterizations of gallium arsenide nanowires grown by buffer layer assisted magnetron sputtering technique
title_fullStr	Characterizations of gallium arsenide nanowires grown by buffer layer assisted magnetron sputtering technique
title_full_unstemmed	Characterizations of gallium arsenide nanowires grown by buffer layer assisted magnetron sputtering technique
title_sort	characterizations of gallium arsenide nanowires grown by buffer layer assisted magnetron sputtering technique
granting_institution	Universiti Teknologi Malaysia, Faculty of Science
granting_department	Faculty of Science
publishDate	2018
url	http://eprints.utm.my/id/eprint/86159/1/NorFadilahMohamadMFS2018.pdf
_version_	1747818498687500288

Characterizations of gallium arsenide nanowires grown by buffer layer assisted magnetron sputtering technique

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