Characterizations of gallium arsenide nanowires grown by buffer layer assisted magnetron sputtering technique
Semiconductor nanowires (NWs) are among the most extensively studied nanostructure for their potential applications in nanoscale devices. Gallium arsenide (GaAs) NWs is a high-performance material with direct bandgap and high electron mobility. Despite the great potential for future nanotechnology,...
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| 格式: | Thesis |
| 语言: | English |
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2018
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| 在线阅读: | http://eprints.utm.my/id/eprint/86159/1/NorFadilahMohamadMFS2018.pdf |
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