Performance evaluation of graphene nanoribbon-based differential amplifier

The evolution of transistor for many device applications have been following the Moore’s Law prediction. The downsizing of transistor to meet design specification may lead to numerous issues related to short channel effect such as leakage current, tunnel effect and increase in power dissipation. To...

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Main Author:	Chan, Jia Zhen
Format:	Thesis
Language:	English
Published:	2022
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/99369/1/ChanJiaZhenMSKE2022.pdf
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spelling	my-utm-ep.993692023-02-23T04:06:57Z Performance evaluation of graphene nanoribbon-based differential amplifier 2022 Chan, Jia Zhen TK Electrical engineering. Electronics Nuclear engineering The evolution of transistor for many device applications have been following the Moore’s Law prediction. The downsizing of transistor to meet design specification may lead to numerous issues related to short channel effect such as leakage current, tunnel effect and increase in power dissipation. To mitigate these issues, nanomaterial is proposed to replace silicon as one of the potential solution. Graphene is an alternative material with its high mobility and high thermal conductivity. Nanoribbon is etched in graphene to convert its metal properties to semiconductor. In this research, differential amplifier is constructed based on graphene device. The performance of graphene based differential amplifier is then compared with silicon-based material for L=32nm. This study used HSPICE for circuit construction and simulation with established graphene nanoribbon SPICE model. Current mirror concept is applied at load of differential amplifier. The number of ribbons is set as 6 and graphene dimer line, N is varied to evaluate performance in term of differential mode gain, common mode gain and CMRR. From simulation result, the highest differential mode gain is 2.59 at N=19 and the lowest common mode gain is 0.12 at N=9. GNRFET based differential amplifier has the best performance with highest CMRR of 18.05 at N=19. While comparing with Si-MOSFET based differential amplifier, GNRFET based differential amplifier is 11.16% higher in differential mode gain, 39.13% lower in common mode gain and 82.14% higher in CMRR. Hence, GNRFET based differential amplifier is 82.14% better performance than Si-MOSFET based differential amplifier. The outcome of this study can be guideline for future study on circuit implementation using graphene material. 2022 Thesis http://eprints.utm.my/id/eprint/99369/ http://eprints.utm.my/id/eprint/99369/1/ChanJiaZhenMSKE2022.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:149986 masters Universiti Teknologi Malaysia, Faculty of Engineering - School of Electrical Engineering Faculty of Engineering - School of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Chan, Jia Zhen Performance evaluation of graphene nanoribbon-based differential amplifier
description	The evolution of transistor for many device applications have been following the Moore’s Law prediction. The downsizing of transistor to meet design specification may lead to numerous issues related to short channel effect such as leakage current, tunnel effect and increase in power dissipation. To mitigate these issues, nanomaterial is proposed to replace silicon as one of the potential solution. Graphene is an alternative material with its high mobility and high thermal conductivity. Nanoribbon is etched in graphene to convert its metal properties to semiconductor. In this research, differential amplifier is constructed based on graphene device. The performance of graphene based differential amplifier is then compared with silicon-based material for L=32nm. This study used HSPICE for circuit construction and simulation with established graphene nanoribbon SPICE model. Current mirror concept is applied at load of differential amplifier. The number of ribbons is set as 6 and graphene dimer line, N is varied to evaluate performance in term of differential mode gain, common mode gain and CMRR. From simulation result, the highest differential mode gain is 2.59 at N=19 and the lowest common mode gain is 0.12 at N=9. GNRFET based differential amplifier has the best performance with highest CMRR of 18.05 at N=19. While comparing with Si-MOSFET based differential amplifier, GNRFET based differential amplifier is 11.16% higher in differential mode gain, 39.13% lower in common mode gain and 82.14% higher in CMRR. Hence, GNRFET based differential amplifier is 82.14% better performance than Si-MOSFET based differential amplifier. The outcome of this study can be guideline for future study on circuit implementation using graphene material.
format	Thesis
qualification_level	Master's degree
author	Chan, Jia Zhen
author_facet	Chan, Jia Zhen
author_sort	Chan, Jia Zhen
title	Performance evaluation of graphene nanoribbon-based differential amplifier
title_short	Performance evaluation of graphene nanoribbon-based differential amplifier
title_full	Performance evaluation of graphene nanoribbon-based differential amplifier
title_fullStr	Performance evaluation of graphene nanoribbon-based differential amplifier
title_full_unstemmed	Performance evaluation of graphene nanoribbon-based differential amplifier
title_sort	performance evaluation of graphene nanoribbon-based differential amplifier
granting_institution	Universiti Teknologi Malaysia, Faculty of Engineering - School of Electrical Engineering
granting_department	Faculty of Engineering - School of Electrical Engineering
publishDate	2022
url	http://eprints.utm.my/id/eprint/99369/1/ChanJiaZhenMSKE2022.pdf
_version_	1776100593652203520

Performance evaluation of graphene nanoribbon-based differential amplifier

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