Evaluation of sneak path current in self-rectifying memristor crossbar

Memristor is a non-volatile memory nanodevice which requires lower energy to operate. Besides, memristor is fast yet stable, thus making it attractive in the computing field and competitive as alternative candidate for the integration of high-density memory. While acting as a memory cell in a crossb...

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Main Author:	Goh, Hui Ying
Format:	Thesis
Language:	English
Published:	2022
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/99387/1/GohHuiYingMSKE2022.pdf
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spelling	my-utm-ep.993872023-02-27T03:05:50Z Evaluation of sneak path current in self-rectifying memristor crossbar 2022 Goh, Hui Ying TK Electrical engineering. Electronics Nuclear engineering Memristor is a non-volatile memory nanodevice which requires lower energy to operate. Besides, memristor is fast yet stable, thus making it attractive in the computing field and competitive as alternative candidate for the integration of high-density memory. While acting as a memory cell in a crossbar array circuit, there is limitation related to undesired sneak path current. Utilizing a self-rectifying memristor is reported to minimize the effect of the sneak path issue. Since there is lack of resources on research of implementing self-rectifying memristor in crossbar array structure, it is the focus of this project. The objective of this project is to model and simulate self-rectifying memristor with different rectification ratio and non-linearity. Their effect on the performance of memristor in crossbar array structure is then analyzed. Several types of self-rectifying memristor are reviewed and their compact SPICE models are generated. The memristor SPICE model is used to build a crossbar array circuit and run simulation through LTSPICE software. Moreover, comparison between Knowm memristor and self-rectifying memristor is done by observing their current-voltage relationship. The reduction of sneak path current by using different value of saturation current in self-rectifying memristor is evaluated and the effect of rectification ratio and non-linearity is being studied. Based on the simulation result, low saturation current helps to ensure large rectification ratio and non-linearity to lower sneak path current in the circuit. In short, self-rectifying memristor is able to effectively suppress sneak path current in crossbar array. 2022 Thesis http://eprints.utm.my/id/eprint/99387/ http://eprints.utm.my/id/eprint/99387/1/GohHuiYingMSKE2022.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:149899 masters Universiti Teknologi Malaysia, Faculty of Engineering - School of Electrical Engineering Faculty of Engineering - School of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Goh, Hui Ying Evaluation of sneak path current in self-rectifying memristor crossbar
description	Memristor is a non-volatile memory nanodevice which requires lower energy to operate. Besides, memristor is fast yet stable, thus making it attractive in the computing field and competitive as alternative candidate for the integration of high-density memory. While acting as a memory cell in a crossbar array circuit, there is limitation related to undesired sneak path current. Utilizing a self-rectifying memristor is reported to minimize the effect of the sneak path issue. Since there is lack of resources on research of implementing self-rectifying memristor in crossbar array structure, it is the focus of this project. The objective of this project is to model and simulate self-rectifying memristor with different rectification ratio and non-linearity. Their effect on the performance of memristor in crossbar array structure is then analyzed. Several types of self-rectifying memristor are reviewed and their compact SPICE models are generated. The memristor SPICE model is used to build a crossbar array circuit and run simulation through LTSPICE software. Moreover, comparison between Knowm memristor and self-rectifying memristor is done by observing their current-voltage relationship. The reduction of sneak path current by using different value of saturation current in self-rectifying memristor is evaluated and the effect of rectification ratio and non-linearity is being studied. Based on the simulation result, low saturation current helps to ensure large rectification ratio and non-linearity to lower sneak path current in the circuit. In short, self-rectifying memristor is able to effectively suppress sneak path current in crossbar array.
format	Thesis
qualification_level	Master's degree
author	Goh, Hui Ying
author_facet	Goh, Hui Ying
author_sort	Goh, Hui Ying
title	Evaluation of sneak path current in self-rectifying memristor crossbar
title_short	Evaluation of sneak path current in self-rectifying memristor crossbar
title_full	Evaluation of sneak path current in self-rectifying memristor crossbar
title_fullStr	Evaluation of sneak path current in self-rectifying memristor crossbar
title_full_unstemmed	Evaluation of sneak path current in self-rectifying memristor crossbar
title_sort	evaluation of sneak path current in self-rectifying memristor crossbar
granting_institution	Universiti Teknologi Malaysia, Faculty of Engineering - School of Electrical Engineering
granting_department	Faculty of Engineering - School of Electrical Engineering
publishDate	2022
url	http://eprints.utm.my/id/eprint/99387/1/GohHuiYingMSKE2022.pdf
_version_	1776100595558514688

Evaluation of sneak path current in self-rectifying memristor crossbar

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