Eletronic properties of boron nitride nanoribbons with single vacancy defect

Hexagonal boron nitride (h-BN), also known as Boron Nitride Nanoribbons (BNNRs), is an electrical insulator with high thermal stability suitable to make as an excellent thermal conductor, including high-temperature equipment. BNNRs is a wide bandgap semiconductor within the range of 5eV until 6eV. I...

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Main Author:	Khoo, Sheng Xuan
Format:	Thesis
Language:	English
Published:	2022
Subjects:	TK Electrical engineering Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/id/eprint/99474/1/KhooShengXuanMSKE2022.pdf
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id	my-utm-ep.99474
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spelling	my-utm-ep.994742023-02-27T07:28:35Z Eletronic properties of boron nitride nanoribbons with single vacancy defect 2022 Khoo, Sheng Xuan TK Electrical engineering. Electronics Nuclear engineering Hexagonal boron nitride (h-BN), also known as Boron Nitride Nanoribbons (BNNRs), is an electrical insulator with high thermal stability suitable to make as an excellent thermal conductor, including high-temperature equipment. BNNRs is a wide bandgap semiconductor within the range of 5eV until 6eV. In this work, two models of BNNRs with single vacancy defect used included Armchair BNNRs and Zigzag BNNRs to investigate its electronic properties. Nearest-neighbour tight-binding model and numerical method are used to simulate the electronic properties of BNNRs with single vacancy, including band structure and local density of states. This simulation work is done by generating a script using numerical computational methods in MATLAB software. The alpha and beta matrix used in the script are modified accordingly when the boron or nitrogen atom is missing. Besides, small perturbation effect is applied into the model to study the effects of impurities at the edges of BNNRs. The simulation result from this work is compared with a pristine BNNRs to study the impact of single vacancy of BNNRs to electronic properties of BNNRs. The comparison results showed that the band structure and local density of state for both ABNNRs and ZBNNRs with single vacancy defect is distorted when compared to pristine model. Besides, the effect of edge perturbation is symmetrical when compared to previous research. 2022 Thesis http://eprints.utm.my/id/eprint/99474/ http://eprints.utm.my/id/eprint/99474/1/KhooShengXuanMSKE2022.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:149921 masters Universiti Teknologi Malaysia, Faculty of Engineering - School of Electrical Engineering Faculty of Engineering - School of Electrical Engineering
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	TK Electrical engineering Electronics Nuclear engineering
spellingShingle	TK Electrical engineering Electronics Nuclear engineering Khoo, Sheng Xuan Eletronic properties of boron nitride nanoribbons with single vacancy defect
description	Hexagonal boron nitride (h-BN), also known as Boron Nitride Nanoribbons (BNNRs), is an electrical insulator with high thermal stability suitable to make as an excellent thermal conductor, including high-temperature equipment. BNNRs is a wide bandgap semiconductor within the range of 5eV until 6eV. In this work, two models of BNNRs with single vacancy defect used included Armchair BNNRs and Zigzag BNNRs to investigate its electronic properties. Nearest-neighbour tight-binding model and numerical method are used to simulate the electronic properties of BNNRs with single vacancy, including band structure and local density of states. This simulation work is done by generating a script using numerical computational methods in MATLAB software. The alpha and beta matrix used in the script are modified accordingly when the boron or nitrogen atom is missing. Besides, small perturbation effect is applied into the model to study the effects of impurities at the edges of BNNRs. The simulation result from this work is compared with a pristine BNNRs to study the impact of single vacancy of BNNRs to electronic properties of BNNRs. The comparison results showed that the band structure and local density of state for both ABNNRs and ZBNNRs with single vacancy defect is distorted when compared to pristine model. Besides, the effect of edge perturbation is symmetrical when compared to previous research.
format	Thesis
qualification_level	Master's degree
author	Khoo, Sheng Xuan
author_facet	Khoo, Sheng Xuan
author_sort	Khoo, Sheng Xuan
title	Eletronic properties of boron nitride nanoribbons with single vacancy defect
title_short	Eletronic properties of boron nitride nanoribbons with single vacancy defect
title_full	Eletronic properties of boron nitride nanoribbons with single vacancy defect
title_fullStr	Eletronic properties of boron nitride nanoribbons with single vacancy defect
title_full_unstemmed	Eletronic properties of boron nitride nanoribbons with single vacancy defect
title_sort	eletronic properties of boron nitride nanoribbons with single vacancy defect
granting_institution	Universiti Teknologi Malaysia, Faculty of Engineering - School of Electrical Engineering
granting_department	Faculty of Engineering - School of Electrical Engineering
publishDate	2022
url	http://eprints.utm.my/id/eprint/99474/1/KhooShengXuanMSKE2022.pdf
_version_	1776100600305418240

Eletronic properties of boron nitride nanoribbons with single vacancy defect

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