Modelling and simulation of Heteromaterial Dual-Gate Dopingless TFET (HTDGDL-TFET) and its application as digital inverter
Tunnel Field -Effect Transistor (TFET) has been known as one of the promising devices which will be replacing Conventional Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) as a future low-power and high-speed logic application. This is because as the size of MOSFET reduce decade by decade,...
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| Format: | Thesis |
| Language: | English |
| Published: |
2022
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| Online Access: | http://eprints.utm.my/id/eprint/99577/1/TeohWeiTingMSKE2022.pdf |
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