Negative bias temperature instability and permittivity dependent delay mitigation in High-K metal oxide compatible cmos dielectric /
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Main Author: | |
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Format: | Thesis Book |
Language: | English |
Published: |
2015.
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Subjects: | |
Online Access: | http://studentsrepo.um.edu.my/id/eprint/7563 |
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001 | u1012432 | ||
003 | SIRSI | ||
005 | 201504021025 | ||
008 | 150402s2015 my a m 000 0 eng | ||
040 | |a UMM |d UMJ |e rda. | ||
090 | |a TK7 |b UMP 2015 Kar | ||
097 | |a TK7 |b UMP 2015 Kar | ||
100 | 1 | |a Karim, Nissar Mohammad, |e author. | |
245 | 1 | 0 | |a Negative bias temperature instability and permittivity dependent delay mitigation in High-K metal oxide compatible cmos dielectric / |c Nissar Mohammad Karim. |
264 | 1 | |c 2015. | |
264 | 4 | |c 2015. | |
300 | |a xix, 168 leaves : |b illustrations ; |c 30 cm. | ||
336 | |a text |2 rdacontent | ||
337 | |a unmediated |2 rdamedia | ||
338 | |a volume |2 rdacarrier | ||
502 | |b Ph.D. |c Jabatan Kejuruteraan Elektrik, Fakulti Kejuruteraan, Universiti Malaya |d 2015. | ||
530 | |a Also issued in CD. | ||
504 | |a Bibliography: leaves 137-152. | ||
650 | 0 | |a Metal oxide semiconductors, Complementary. | |
690 | |a Metallic oxide. | ||
710 | 2 | |a Universiti Malaya. |b Jabatan Kejuruteraan Elektrik, |e degree granting instituitions. | |
856 | 4 | 1 | |u http://studentsrepo.um.edu.my/id/eprint/7563 |
900 | |a AMA NSR | ||
596 | |a 1 7 25 | ||
999 | |a TK7 UMP 2015 KAR |w LC |c 1 |i A516164601 |d 15/2/2016 |f 15/2/2016 |g 1 |l STACKS |m P07JURUTER |r N |s Y |t TESIS |u 15/2/2016 |1 STEM | ||
999 | |a TK7 UMP 2015 KAR |w LC |c 1 |i A516122527 |d 20/9/2016 |f 20/9/2016 |g 1 |l STACKS |m P01UTAMA |r Y |s Y |t TESIS |u 20/9/2016 |1 STEM | ||
999 | |a TK7 UMP 2015 KAR |w LC |c 1 |i A516566494 |l STACKS |m P25UMARCHI |r Y |s Y |t CD |u 4/12/2017 |1 STEM |