Mohd Afiq Anuar. (2020). Growth of semi-polar (11-22) GaN epitaxial layer on M-plane sapphire via MOCVD.
Chicago Style (17th ed.) CitationMohd Afiq Anuar. Growth of Semi-polar (11-22) GaN Epitaxial Layer on M-plane Sapphire via MOCVD. 2020.
MLA引文Mohd Afiq Anuar. Growth of Semi-polar (11-22) GaN Epitaxial Layer on M-plane Sapphire via MOCVD. 2020.
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