Mohd Afiq Anuar. (2020). Growth of semi-polar (11-22) GaN epitaxial layer on M-plane sapphire via MOCVD.
Chicago Style (17th ed.) CitationMohd Afiq Anuar. Growth of Semi-polar (11-22) GaN Epitaxial Layer on M-plane Sapphire via MOCVD. 2020.
MLA (8th ed.) CitationMohd Afiq Anuar. Growth of Semi-polar (11-22) GaN Epitaxial Layer on M-plane Sapphire via MOCVD. 2020.
Warning: These citations may not always be 100% accurate.