Growth of semi-polar (11-22) GaN epitaxial layer on M-plane sapphire via MOCVD /

Growth of semi-polar (11-22) GaN epitaxial layer on M-plane sapphire via MOCVD /

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書目詳細資料
主要作者:	Mohd Afiq Anuar (Author)
格式:	Thesis 圖書
語言:	English
出版:	2020.
主題:	Gallium nitride. Epitaxy. Optoelectronics. Crystal growth. Piezoelectricity. Chemical vapor deposition.
在線閱讀:	http://studentsrepo.um.edu.my/12183/
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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