Mohd Nazri Abd Rahman. (2021). High quality single-crystalline aluminum nitride grown using pulsed atomic-layer epitaxy technique by MOCVD on sapphire substrate.
Chicago Style (17th ed.) CitationMohd Nazri Abd Rahman. High Quality Single-crystalline Aluminum Nitride Grown Using Pulsed Atomic-layer Epitaxy Technique by MOCVD on Sapphire Substrate. 2021.
MLA (8th ed.) CitationMohd Nazri Abd Rahman. High Quality Single-crystalline Aluminum Nitride Grown Using Pulsed Atomic-layer Epitaxy Technique by MOCVD on Sapphire Substrate. 2021.
Warning: These citations may not always be 100% accurate.