APA引文

Mohd Nazri Abd Rahman. (2021). High quality single-crystalline aluminum nitride grown using pulsed atomic-layer epitaxy technique by MOCVD on sapphire substrate.

Chicago Style (17th ed.) Citation

Mohd Nazri Abd Rahman. High Quality Single-crystalline Aluminum Nitride Grown Using Pulsed Atomic-layer Epitaxy Technique by MOCVD on Sapphire Substrate. 2021.

MLA引文

Mohd Nazri Abd Rahman. High Quality Single-crystalline Aluminum Nitride Grown Using Pulsed Atomic-layer Epitaxy Technique by MOCVD on Sapphire Substrate. 2021.

警告：这些引文格式不一定是100％准确.