Growth of non-polar (11-20) A-plane GaN based leds grown on (1-120) R-plane sapphire substrate via MOCVD /

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Bibliographic Details
Main Author: Anas Kamarundzaman (Author)
Format: Thesis Book
Language:English
Published: 2022.
Subjects:
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040 |a UMM  |e rda 
090 |a QC3  |b UMP 2022 Anak 
100 0 |a Anas Kamarundzaman,  |e author. 
245 1 0 |a Growth of non-polar (11-20) A-plane GaN based leds grown on (1-120) R-plane sapphire substrate via MOCVD /  |c Anas bin Kamarundzaman. 
264 1 |c 2022. 
300 |a xx, 143 leaves :  |b illustrations ;  |c 30 cm 
336 |a text  |2 rdacontent 
336 |a still image  |2 rdacontent 
337 |a unmediate  |2 rdamedia 
337 |a computer  |2 rdamedia 
338 |a volum  |2 rdacarrier 
338 |a computer disc  |2 rdacarrier 
502 |b Ph.D.  |c Jabatan Fizik, Fakulti Sains, Universiti Malaya  |d 2022. 
504 |a Bibliography: leaves 132-142. 
530 |a Also issued in CD. 
650 0 |a Gallium nitride. 
650 0 |a Metal organic chemical vapor deposition. 
650 0 |a Light emitting diodes. 
710 2 |a Universiti Malaya.  |b Jabatan Fizik,  |e degree granting institution. 
900 |a NNANS US 
596 |a 1 
999 |a QC3 UMP 2022 ANAK  |w LC  |c 1  |i A517728349  |f 16/6/2022  |g 1  |l RESTRICTED  |m P01UTAMA  |r Y  |s Y  |t TESIS  |u 16/6/2022  |1 STEM  |o .PUBLIC. Embargoed until 31.01.2024  |o .STAFF. Item kept in BPM 16.06.2022 - msp