APA引文

Olabisi, O. K. (2022). Development of holmium oxide thin film as high-k gate dielectric based on silicon carbide substrate.

Chicago Style (17th ed.) Citation

Olabisi, Odesanya Kazeem. Development of Holmium Oxide Thin Film as High-k Gate Dielectric Based on Silicon Carbide Substrate. 2022.

MLA引文

Olabisi, Odesanya Kazeem. Development of Holmium Oxide Thin Film as High-k Gate Dielectric Based on Silicon Carbide Substrate. 2022.

警告：這些引文格式不一定是100％准確.