Development of holmium oxide thin film as high-k gate dielectric based on silicon carbide substrate /
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| Main Author: | |
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| Format: | Thesis Book |
| Language: | English |
| Published: |
2022.
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| Physical Description: | xxvi, 220 leaves : illustrations (some colour) ; 30 cm Also issued in CD. |
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| Bibliography: | Bibiliography: leaves 193-219. |