Development of holmium oxide thin film as high-k gate dielectric based on silicon carbide substrate /

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书目详细资料
主要作者: Olabisi, Odesanya Kazeem (Author)
格式: Thesis 图书
语言:English
出版: 2022.
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实物特征
实物描述:xxvi, 220 leaves : illustrations (some colour) ; 30 cm
Also issued in CD.
参考书目:Bibiliography: leaves 193-219.