Development of holmium oxide thin film as high-k gate dielectric based on silicon carbide substrate /
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | English |
| Published: |
2022.
|
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| LEADER | 01202nam a2200313 i 4500 | ||
|---|---|---|---|
| 001 | u1160438 | ||
| 003 | SIRSI | ||
| 005 | 202301131046 | ||
| 008 | 230113s2022 my a m 000 0 eng | ||
| 040 | |a UMM |e rda | ||
| 090 | |a TJ7 |b UMP 2022 Ola | ||
| 100 | 1 | |a Olabisi, Odesanya Kazeem, |e author. | |
| 245 | 1 | 0 | |a Development of holmium oxide thin film as high-k gate dielectric based on silicon carbide substrate / |c Odesanya Kazeem Olabisi. |
| 264 | 1 | |c 2022. | |
| 300 | |a xxvi, 220 leaves : |b illustrations (some colour) ; |c 30 cm | ||
| 336 | |a text |2 rdacontent | ||
| 336 | |a still image |2 rdacontent | ||
| 337 | |a unmediated |2 rdamedia | ||
| 337 | |a computer |2 rdamedia | ||
| 338 | |a volume |2 rdacarrier | ||
| 338 | |a computer disc |2 rdacarrier | ||
| 502 | |b Ph.D. |c Jabatan Kejuruteraan Mekanik, Fakulti Kejuruteraan, Universiti Malaya |d 2022. | ||
| 504 | |a Bibiliography: leaves 193-219. | ||
| 530 | |a Also issued in CD. | ||
| 710 | 2 | |a Universiti Malaya. |b Jabatan Kejuruteraan Mekanik, |e degree granting institution. | |
| 900 | |a msp | ||
| 901 | |a 090-1- copy in process. | ||
| 596 | |a 1 | ||
| 999 | |a XX(1160438.1) |w LC |c 1 |i 1160438-1001 |l INPROCESS |m P01UTAMA |r Y |s Y |t TESIS |u 13/1/2023 |o .STAFF. tiada borang agreement | ||