Fabrication and characterization of Ohmic contacts made with Au/Ni/Ge/Au multilayer metallization system on N-type gallium arsenide /

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Bibliographic Details
Main Author: Lee, Seng Hin
Format: Thesis Book
Language:English
Published: 1990.
Subjects:
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035 |a ABL-2836 
040 |a UMM 
090 |a TK7872  |b C67Lee 
100 1 0 |a Lee, Seng Hin. 
245 1 0 |a Fabrication and characterization of Ohmic contacts made with Au/Ni/Ge/Au multilayer metallization system on N-type gallium arsenide /  |c by Lee Seng Hin. 
260 |c 1990. 
300 |a xviii, 180 leaves :  |b ill. ;  |c 30 cm. 
502 |a Dissertation (M.Eng.) -- National University of Singapore, 1990. 
504 |a Bibliography: leaves 122-128. 
650 0 |a Ohmic contacts. 
650 0 |a Gallium arsenide  |x Metallurgy  |x Measurement. 
650 0 |a Gallium arsenide  |x Electrometallurgy  |x Measurement. 
948 |a 29/12/1992  |b 06/09/2002 
596 |a 1 
999 |a F TK7872 C67LEE  |w LC  |c 1  |i A011176346  |l STACKS  |m P01UTAMA  |r Y  |s Y  |t TESIS  |u 21/1/1993