Copper-induced deep level defects in GaAs0.6P0.4 alloy semiconductor /
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| Main Author: | |
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| Format: | Thesis Book |
| Language: | English |
| Published: |
1992.
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| LEADER | 00758cam a2200229 a 4500 | ||
|---|---|---|---|
| 001 | u337992 | ||
| 003 | SIRSI | ||
| 008 | 931020s1992 si v 00 1 eng m | ||
| 035 | |a ABQ-3688 | ||
| 040 | |a UMM | ||
| 090 | |a QC611.6 |b D4Hu | ||
| 100 | 1 | 0 | |a Hu, Peh Yin. |
| 245 | 1 | 0 | |a Copper-induced deep level defects in GaAs0.6P0.4 alloy semiconductor / |c by Hu Peh Yin. |
| 260 | |c 1992. | ||
| 300 | |a ii, 121 leaves : |b ill. ; |c 30 cm. | ||
| 502 | |a Dissertation (M.Sc.) -- National University of Singapore, 1992. | ||
| 504 | |a Bibliography: leaves 117-121. | ||
| 650 | 0 | |a Semiconductors |x Defects. | |
| 650 | 0 | |a Gallium arsenide semiconductors. | |
| 948 | |a 20/10/1993 |b 20/08/2002 | ||
| 596 | |a 1 | ||
| 999 | |a QC611.6 D4HU |w LC |c 1 |i A504482242 |l STACKS |m P01UTAMA |r Y |s Y |t TESIS |u 20/1/1994 | ||