Defect studies in gallium arsenide phosphide and confirmation of negative-U property of sulphur related DX center /
Saved in:
主要作者: | Luo, Yingying |
---|---|
格式: | Thesis 图书 |
语言: | English |
出版: |
1994.
|
主题: | |
标签: |
添加标签
没有标签, 成为第一个标记此记录!
|
相似书籍
-
Copper-induced deep level defects in GaAs0.6P0.4 alloy semiconductor /
由: Hu, Peh Yin
出版: (1992) -
Pulse-duration dependent capacitance analysis and its application to copper in GaAs0.6P0.4 /
由: Han, Meng Kwong
出版: (1994) -
Tight-binding molecular dynamics studies of clusters and defects in GaAs and AlAs /
由: Quek, Hoon Khim
出版: (1998) -
Defect studies of MBE grown AlGaAs/GaAs and InGaAs/GaAs materials /
由: Du, An Yan
出版: (1998) -
Laser annealing of donor implanted gallium arsenide /
由: Akintunde, J. A.
出版: (1981)