A comparative study of MOS capacitors fabricated on single-crystal and polycrystalline silicon /
Saved in:
主要作者: | Tay, Tuang Mee |
---|---|
格式: | Thesis 圖書 |
語言: | English |
出版: |
1990.
|
主題: | |
標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
相似書籍
-
Structural, electrical, thermal and optical properties of polycrystalline metal chalcogenide compounds
由: Liew, Josephine Ying Chyi
出版: (2011) -
Reliability investigation of MOS devices under high current impulse stressing /
由: Teh, Gim Leong
出版: (1998) -
The electrocatalytic activity of Polycrystalline Copper towards the electrochemical reduction of Carbon Dioxide /
由: Jumat Salimon
出版: (2001) -
Degradation and annealing of electrically-stressed thin oxide in MOS devices /
由: Ng, Wee Thong
出版: (1998) -
Electrical characterisation of MOS gate oxide /
由: Ooi, Joo Aik
出版: (1996)