Investigation on parallel operations of IGBTs /

Investigation on parallel operations of IGBTs /

محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Yang, Chorng Ho
التنسيق:	أطروحة كتاب
اللغة:	English
منشور في:	1995.
الموضوعات:	Bipolar transistors. Electric circuit design > Computer programs Power semiconductors > Design > Data processing
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

مواد مشابهة

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Noise characterization of polysilicon emitter bipolar transistors /
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New techniques for the characterization of hot-carrier degradation in MOS devices /
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Thermal-mechanical analysis of bonding pad in insulated gate bipolar transistor

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Characterization of hot-carrier degradation in submicrometer MOS transistors /
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Evaluation of hot-carrier degradation in submicrometre MOSFETs by gate capacitance and charge pumping current measurements /
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The lateral profiling of interface state and oxide charge densities in electrically stressed MOSFET's /
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Hot-carrier effects in thin gate oxide MOSFET's /
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Hot-carrier characterization of submicrometer MOS transistors : subthreshold degradation and channel-width effect /
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Hot-carrier studies in submicrometer SOI and conventional MOSFETs /
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Design and construction of charge pumping technique for MOS transistor characterization /
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Carrier lifetime characterization techniques in SOI and bulk silicon /
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Process integration issues of self-aligned titanium silicide technology (Ti-Salicide) in deep sub-micron CMOS devices fabrication /
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