Low-temperature grown semiconducting GaAs epilayer on Si by molecular beam epitaxy and its application to laser diodes /

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Bibliographic Details
Main Author: Phua, Cheng Chiang
Format: Thesis Book
Language:English
Published: 1997.
Subjects:
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008 970429s1997 si v 00 1 eng m
035 |a ACD-0380 
040 |a UMM 
090 |a TK7871.15  |b G3Phu 
100 1 0 |a Phua, Cheng Chiang. 
245 1 0 |a Low-temperature grown semiconducting GaAs epilayer on Si by molecular beam epitaxy and its application to laser diodes /  |c by Phua Cheng Chiang. 
260 |c 1997. 
300 |a xiv, 160 leaves :  |b ill. ;  |c 30 cm. 
502 |a Thesis (Ph.D.) -- National University of Singapore, 1997. 
504 |a Bibliography: leaves 146-158. 
650 0 |a Gallium arsenide semiconductors. 
650 0 |a Molecular beam epitaxy. 
650 0 |a Semiconductor lasers. 
650 0 |a Low temperatures. 
948 |a 29/04/1997  |b 15/08/1998 
596 |a 1 
999 |a TK7871.15 G3PHU  |w LC  |c 1  |i A506935302  |d 2/9/1998  |l STACKS  |m P01UTAMA  |n 5  |r Y  |s Y  |t TESIS  |u 23/7/1998