Leang, S. E. (1997). New techniques for the characterization of hot-carrier degradation in MOS devices.
Chicago Style (17th ed.) CitationLeang, Sern Ee. New Techniques for the Characterization of Hot-carrier Degradation in MOS Devices. 1997.
MLA引文Leang, Sern Ee. New Techniques for the Characterization of Hot-carrier Degradation in MOS Devices. 1997.
警告:這些引文格式不一定是100%准確.