Pan, J. S. (1997). Surface modification of Si, GaAs and and InP by 1-10 keV Ar+ and N2+ ion bombardment.
Chicago Style (17th ed.) CitationPan, Ji Sheng. Surface Modification of Si, GaAs and and InP by 1-10 KeV Ar+ and N2+ Ion Bombardment. 1997.
MLA引文Pan, Ji Sheng. Surface Modification of Si, GaAs and and InP by 1-10 KeV Ar+ and N2+ Ion Bombardment. 1997.
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