Growth and characterization of InGaAlAs quaternary alloy for laser diode applications /
Saved in:
Main Author: | Ramam Akkipeddi |
---|---|
Format: | Thesis Book |
Language: | English |
Published: |
1997.
|
Subjects: | |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Optical monitoring of alluminium deposition on gallium arsenide by chemical beam epitaxy /
by: Muhammad Azmi Abdul Hamid
Published: (1999) -
A study of traps in semi-insulating GaAs grown by MBE at low temperatures /
by: Goo, Chuen Hang
Published: (1997) -
Defect studies of MBE grown AlGaAs/GaAs and InGaAs/GaAs materials /
by: Du, An Yan
Published: (1998) -
Low-temperature grown semiconducting GaAs epilayer on Si by molecular beam epitaxy and its application to laser diodes /
by: Phua, Cheng Chiang
Published: (1997) -
Study of MBE grown AIInGaAs/AIGaAs quantum wells and their application in semiconductor lasers /
by: Zhang, Zhihe
Published: (1997)