Process integration issues of self-aligned titanium silicide technology (Ti-Salicide) in deep sub-micron CMOS devices fabrication /

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Bibliographic Details
Main Author: Lim, Chong Wee
Format: Thesis Book
Language:English
Published: 1998.
Subjects:
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008 990402s1998 si v 00 1 eng m
035 |a ACG-9086 
040 |a UMM 
090 |a TK7871.15  |b S54Lim 
100 1 0 |a Lim, Chong Wee. 
245 1 0 |a Process integration issues of self-aligned titanium silicide technology (Ti-Salicide) in deep sub-micron CMOS devices fabrication /  |c by Lim Chong Wee. 
260 |c 1998. 
300 |a xiii, 100 leaves :  |b ill. ;  |c 30 cm. 
502 |a Dissertation (M.Sc.) -- National University of Singapore, 1998. 
504 |a Includes bibliographical references. 
650 0 |a Silicides. 
650 0 |a Integrated circuits  |x Ultra large scale integration  |x Materials. 
650 0 |a Metal oxide semiconductors, Complementary  |x Design 
650 0 |a Titanium. 
948 |a 02/04/1999  |b 22/05/1999 
596 |a 1 
999 |a TK7871.15 S54LIM  |w LC  |c 1  |i A508384243  |l STACKS  |m P01UTAMA  |r Y  |s Y  |t TESIS  |u 3/6/1999