Process integration issues of self-aligned titanium silicide technology (Ti-Salicide) in deep sub-micron CMOS devices fabrication /

相似书籍

• Integration of self-aligned silicide (salicide) process for sub-0.25 [mu]m CMOS technology /
  由: Ho, Chaw Sing
  出版: (2002)
• Device Characterization of 0.8-µm CMOS Technology
  由: Kooh, Roy Jinn Chye
  出版: (2000)
• A study of stress in backend metallization in ULSI devices /
  由: Goh, Chia Lan
  出版: (2006)
• A study on integrated circuits I-V characteristics using fault localization system /
  由: Quah, Larry Thiam Soon
  出版: (1995)
• Defectivity improvement in advanced processes and its investigation to negative bias temperature instabilities in High-K/Metal-Gate Deep-Submicron CMOS /
  由: Yasmin Abdul Wahab
  出版: (2015)