Ng, W. T. (1998). Degradation and annealing of electrically-stressed thin oxide in MOS devices.
Chicago Style (17th ed.) CitationNg, Wee Thong. Degradation and Annealing of Electrically-stressed Thin Oxide in MOS Devices. 1998.
MLA引文Ng, Wee Thong. Degradation and Annealing of Electrically-stressed Thin Oxide in MOS Devices. 1998.
警告:這些引文格式不一定是100%准確.