Degradation and annealing of electrically-stressed thin oxide in MOS devices /

Saved in:
Bibliographic Details
Main Author: Ng, Wee Thong
Format: Thesis Book
Language:English
Published: 1998.
Subjects:
Tags: Add Tag
No Tags, Be the first to tag this record!
LEADER 00894cam a2200241 a 4500
001 u438263
003 SIRSI
008 990420s1998 si v 00 1 eng m
035 |a ACH-0104 
040 |a UMM 
090 |a TK7871.99  |b M44Ng 
100 1 0 |a Ng, Wee Thong. 
245 1 0 |a Degradation and annealing of electrically-stressed thin oxide in MOS devices /  |c by Ng Wee Thong. 
260 |c 1998. 
300 |a xvi, 94 leaves :  |b ill. ;  |c 30 cm. 
500 |a Spine title: Electrically-stressed thin oxide in MOS devices. 
502 |a Dissertation (M.Eng.) -- National University of Singapore, 1998. 
504 |a Includes bibliographical references. 
650 0 |a Metal oxide semiconductors  |x Deterioration 
740 0 0 |a Electrically-stressed thin oxide in MOS devices. 
948 |a 20/04/1999  |b 24/05/1999 
596 |a 1 
999 |a TK7871.99 M44NG  |w LC  |c 1  |i A508386278  |l STACKS  |m P01UTAMA  |r Y  |s Y  |t TESIS  |u 3/6/1999