Defect studies of MBE grown AlGaAs/GaAs and InGaAs/GaAs materials /

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Bibliographic Details
Main Author: Du, An Yan
Format: Thesis Book
Language:English
Published: 1998.
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035 |a ACH-7226 
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090 |a TK7871.15  |b G3Du 
100 1 0 |a Du, An Yan. 
245 1 0 |a Defect studies of MBE grown AlGaAs/GaAs and InGaAs/GaAs materials /  |c by Du An Yan. 
260 |c 1998. 
300 |a xiv, 164 leaves :  |b ill. ;  |c 30 cm. 
502 |a Thesis (Ph.D.) -- National University of Singapore, 1999. 
504 |a Bibliography: leaves 151-164. 
650 0 |a Gallium arsenide semiconductors  |x Defects 
650 0 |a Molecular beam epitaxy. 
948 |a 09/08/1999  |b 19/07/2000 
596 |a 1 
999 |a TK7871.15 G3DU  |w LC  |c 1  |i A509000593  |l STACKS  |m P01UTAMA  |r Y  |s Y  |t TESIS  |u 2/8/2000