Defect studies of MBE grown AlGaAs/GaAs and InGaAs/GaAs materials /
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Format: | Thesis Book |
Language: | English |
Published: |
1998.
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LEADER | 00758cam a2200229 a 4500 | ||
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001 | u443185 | ||
003 | SIRSI | ||
008 | 990805s1999 si v 00 eng m | ||
035 | |a ACH-7226 | ||
040 | |a UMM | ||
090 | |a TK7871.15 |b G3Du | ||
100 | 1 | 0 | |a Du, An Yan. |
245 | 1 | 0 | |a Defect studies of MBE grown AlGaAs/GaAs and InGaAs/GaAs materials / |c by Du An Yan. |
260 | |c 1998. | ||
300 | |a xiv, 164 leaves : |b ill. ; |c 30 cm. | ||
502 | |a Thesis (Ph.D.) -- National University of Singapore, 1999. | ||
504 | |a Bibliography: leaves 151-164. | ||
650 | 0 | |a Gallium arsenide semiconductors |x Defects | |
650 | 0 | |a Molecular beam epitaxy. | |
948 | |a 09/08/1999 |b 19/07/2000 | ||
596 | |a 1 | ||
999 | |a TK7871.15 G3DU |w LC |c 1 |i A509000593 |l STACKS |m P01UTAMA |r Y |s Y |t TESIS |u 2/8/2000 |