Carrier lifetime characterization techniques in SOI and bulk silicon /
Saved in:
Main Author: | Cheng, Zhiyuan |
---|---|
Format: | Thesis Book |
Language: | English |
Published: |
1999.
|
Subjects: | |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Electrical characterization of bulk traps and interface traps in the fully-depleted SOI MOSFET /
by: Lun, Zhao
Published: (2002) -
Hot-carrier studies in submicrometer SOI and conventional MOSFETs /
by: Yip, Anselm
Published: (1998) -
A study on the effects of design parameters on PD SOI MOSFET /
by: Nurul Azimah Ahmad Arzaai
Published: (2013) - Numerical simulations of innovative ground plane and double-gate configurations in thin-body and -buried oxide of SOI MOSFETS
-
New techniques for the characterization of hot-carrier degradation in MOS devices /
by: Leang, Sern Ee
Published: (1997)