Physical model of a mos field effect transistor /

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Bibliographic Details
Main Author: Nalina Balakrishnan
Format: Thesis Book
Language:English
Published: 2001.
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035 |a ACQ-0618 
040 |a UMM 
090 |a QC3  |b UM 2001 Nal 
100 0 0 |a Nalina Balakrishnan. 
245 1 0 |a Physical model of a mos field effect transistor /  |c Nalina Balakrishnan. 
260 |c 2001. 
300 |a 65 leaves :  |b ill. ;  |c 29 cm. 
502 |a Dissertation (M.Sc.) -- Jabatan Fizik, Fakulti Sains, Universiti Malaya, 2001. 
504 |a Includes bibliographical references. 
710 2 0 |a Universiti Malaya.  |b Jabatan Fizik. 
948 |a 11/07/2001  |b 09/03/2004 
596 |a 1 
999 |a QC3 UM 2001 NAL  |w LC  |c 1  |i A510355538  |l STACKS  |m P01UTAMA  |r Y  |s Y  |t TESIS  |u 10/10/2001