APA引文

Chua, H. N. (2000). Void formation in P+ Ti-Salicided Polysilicon gate electrode in deep sub-quarter-micron CMOS Technology.

Chicago Style (17th ed.) Citation

Chua, Hwee Ngoh. Void Formation in P+ Ti-Salicided Polysilicon Gate Electrode in Deep Sub-quarter-micron CMOS Technology. 2000.

MLA引文

Chua, Hwee Ngoh. Void Formation in P+ Ti-Salicided Polysilicon Gate Electrode in Deep Sub-quarter-micron CMOS Technology. 2000.

警告：這些引文格式不一定是100％准確.