Chua, H. N. (2000). Void formation in P+ Ti-Salicided Polysilicon gate electrode in deep sub-quarter-micron CMOS Technology.
Chicago Style (17th ed.) CitationChua, Hwee Ngoh. Void Formation in P+ Ti-Salicided Polysilicon Gate Electrode in Deep Sub-quarter-micron CMOS Technology. 2000.
MLA (8th ed.) CitationChua, Hwee Ngoh. Void Formation in P+ Ti-Salicided Polysilicon Gate Electrode in Deep Sub-quarter-micron CMOS Technology. 2000.
Warning: These citations may not always be 100% accurate.